PART |
Description |
Maker |
M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5256DP-45LL-W M5M5256DP-45XL-W M5M5256DP-55LL-W |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-SOIC -40 to 85 From old datasheet system
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Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5256DP-45LL-1 M5M5256DP-45LL-I M5M5256DP-45XL-I |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM From old datasheet system
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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M5M5256CFP-12VLL M5M5256CFP-12VXL M5M5256CFP-15VLL |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal Transparent D-Type Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp. Cypress Semiconductor, Corp.
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CDM-62256C CDM-62256C3 |
High Reliability CMOS 32768 x 8-Bit LSI Static RAM
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Harris Semiconductor
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M5M5256DFP-70LLIBM |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
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Renesas Electronics Corporation
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M5M5256DFP-70VLL-I M5M5256DFP-70VXL-I M5M5256DFP-8 |
32K X 8 STANDARD SRAM, 85 ns, PDSO28 8 X 13.40 MM, TSOP-28 32K X 8 STANDARD SRAM, 85 ns, PDSO28 0.450 INCH, SOP-28 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM From old datasheet system
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Maxim Integrated Products, Inc. Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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M5M51016BRT-10LL M5M51016BRT-10L D98007 M5M51016BT |
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM From old datasheet system 1048576-BIT(65536-16-1048576-BIT(65536-WORD WORDBY BY16-BIT)CMOS STATIC RAM
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Mitsubishi Electric Corporation
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IDT6116LA IDT6116SA IDT6116SA20TDB IDT6116SA20SO I |
From old datasheet system 2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOJ-24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24 2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOIC-24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, PDSO24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
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http:// IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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